Observation of oxide precipitates in InN nanostructures
نویسندگان
چکیده
منابع مشابه
Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy
InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500 °C. A high level of oxygen contamination in the growth chamber led to formation of In2O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy TEM . The concentration of In2O3 was estimated to be less than 0.07 vol % in the pres...
متن کاملDirect observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si
We report a cross-sectional scanning tunneling microscopy investigation of heavily Si doped @001#-oriented GaAs grown by molecular-beam epitaxy. At a very high doping level (6 310 cm), Si-doping induced precipitates are directly observed in XSTM images of the as-grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis ~;80 Å! along the gr...
متن کاملsynthesis of platinum nanostructures in two phase system
چکیده پلاتین، فلزی نجیب، پایدار و گران قیمت با خاصیت کاتالیزوری زیاد است که کاربرد های صنعتی فراوانی دارد. کمپلکس های پلاتین(ii) به عنوان دارو های ضد سرطان شناخته شدند و در شیمی درمانی بیماران سرطانی کاربرد دارند. خاصیت کاتالیزوری و عملکرد گزینشی پلاتین مستقیماً به اندازه و- شکل ماده ی پلاتینی بستگی دارد. بعضی از نانو ذرات فلزی در سطح مشترک مایع- مایع سنتز شده اند، اما نانو ساختار های پلاتین ب...
Probing Nucleation Mechanism of Self-Catalyzed InN Nanostructures
The nucleation and evolution of InN nanowires in a self-catalyzed growth process have been investigated to probe the microscopic growth mechanism of the self-catalysis and a model is proposed for high pressure growth window at ~760 Torr. In the initial stage of the growth, amorphous InNx microparticles of cone shape in liquid phase form with assistance of an InNx wetting layer on the substrate....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2007
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2822396